SiC EPI is ideally suited for high powered electronics碳化矽磊晶或稱碳化矽外延非常理想做為高功率元件的器件

The unique electronic, mechanical and thermal properties of SiC make it perfect material for electronic devices that operate at high power and high temperatures (above 400 ºc), which are beyond the capability of both silicon and gallium arsenide. SiC holds an advantage over competing component technologies by offering higher power density, better heat dissipation, and increased RF bandwidth capability. Because of these properties, devices based on SiC are in high demand for both military and commercial applications. The high temperature, voltage and inherently improved power conversion capability of SiC will enable significant improvement in the efficiency and performance of many next generation systems and applications.

Typical Applications:

SIC-SBD (Schottky) / SIC-MOSFET / SIC-JFET

Customize for Thyristor / GTO / IGOT

相關文章:

1.ROHM完成SiC元件的一貫化製造體制