以下為本公司之砷化鎵GaAs 與碳化矽SiC 晶錠或晶圓之一般規格表
HB-GaAs Ingot and
Wafer (Diameter:
2”，2.5”，3”)
|
Parameters of
HB-GaAs Ingot & Wafer |
|
Conduct Type
|
Semi-conducting |
|
Dopant
|
Si |
|
Diameter |
50.8±0.4mm;
63.5±0.4mm; 76.2±0.4mm |
|
Wafer
Orientation |
（100）15°±0.5°off
toward (111)A |
|
Carrier
Concentration |
(0.4-4)×1018cm-3 |
|
Resistivity (at
RT) |
(0.8-9)×10-3Ωcm |
|
Mobility
|
＞1200cm2/Vs |
|
Etch Pit
Density(EPD) |
≤5000cm-2 |
|
OF / IF |
EJ / US |
|
Surface Finish
|
Side1 |
Polished |
Side2 |
L/E |
Epi-Ready |
Yes |
|
Packing
|
Single or
Cassette |
|
l
Other orientation, thickness, or other parameters
available upon request. |
VGF GaAs Ingot and Wafer (Diameter:
2”，3”，4”)
|
Parameters of
VGF-GaAs Ingot & Wafer |
|
Conduct Type
|
Semi-conducting |
|
Dopant
|
Si |
|
Diameter |
50.8±0.4mm;
76.2±0.4mm; 100±0.4mm |
|
Wafer
Orientation |
(100) |
|
Carrier
Concentration |
(0.4-4)×1018cm-3 |
|
Resistivity (at
RT) |
(0.8-9)×10-3Ωcm |
|
Mobility
|
＞1200cm2/Vs |
|
Etch Pit
Density(EPD) |
≤5000cm-2 |
|
OF / IF |
EJ / US |
|
Surface Finish
|
Side1 |
Polished |
Side2 |
L/E |
Epi-Ready |
Yes |
|
Packing
|
Single or
Cassette |
|
|
|
Conduct Type
|
Semi-insulating |
|
Dopant
|
Undoped |
|
Diameter |
50.8±0.4mm;
76.2±0.4mm; 100±0.4mm |
|
Wafer
Orientation |
(100) |
|
Resistivity (at
RT) |
＞107Ωcm |
|
Mobility
|
＞5000cm2/Vs |
|
Etch Pit
Density(EPD) |
≤10000cm-2 |
|
OF / IF |
EJ / US |
|
Surface Finish
|
Side1 |
Polished |
Side2 |
L/E |
Epi-Ready |
Yes |
|
Packing
|
Single or
Cassette |
|
l
Other orientation, thickness, or other parameters
available upon request. |
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